Nonequilibrium carrier dynamics in semiconductors: by Marco Saraniti, Umberto Ravaioli

By Marco Saraniti, Umberto Ravaioli

"Nonequilibrium service Dynamics in Semiconductors" is a well-established, professional convention, held each 2 years, overlaying various issues of present curiosity to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum details processing. Papers approved for book are chosen and peer-reviewed via individuals of this system Committee through the convention to make sure either quick and top quality processing.

The court cases of this sequence of meetings represent a finished resource of reference of the said cutting-edge within the field.

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Additional resources for Nonequilibrium carrier dynamics in semiconductors: proceedings of the 14th international conference, July 25-29, 2005, Chicago, USA

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Moreover, we find that the capture process is predominantly spin-preserving in nature. These results suggest that phonon mediated scattering govems the quantum dot filling. Semiconductor quantum dots (QDs) are attractive both as model systems to study the physics of zero-dimensional structures and for their device applications. In particular, the discrete energy level structure of QDs offers significant advantages for modem semiconductor laser technology. In QD based devices, nonequilibrium carrier dynamics plays a central role in determining the performance limitations.

Bertoni National Research Center S3, INFM-CNR , and Dipartimento di Fisica, Universita di Modena e Reggio Emilia, via Campi 213/A, 1-41100, Modena, Italy. Summary. We present a time dependent numerical analysis of the entanglement created between an electron freely propagating in a 2D system and a charged particle bound to a specific site by a harmonic potential. The latter can be considered as a simplified model of a shallow impurity. The dynamics of the carrier initially bound in the harmonic potential is coupled to that of the incoming electron through a screened Coulomb interaction.

The interaction with surface phonons leads to an increased background in the vicinity of the ZPL. 8 Q. 4 c g B 1 /\ # o 1 0) no CO 10 time [ps] 15 20 1 2 3 energy [meV] Fig. 2. (a) Optical polarization after utrashort excitation for a QDs located in the center of a slab with different widths as given in the figure, (b) Absorption spectrum for a slab width of 20 nm. The optical polarization after ultrashort excitation for a QD in the center of a free-standing slab is shown in Fig. 2 (a). Now the emitted wave packet is repeatedly reflected from both surfaces.

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