By O'Mara W. C., Herring R. B., Hunt L. P.
This instruction manual is a complete precis of the technological know-how, expertise and production of semiconductor silicon fabrics. each recognized estate of silicon is specific. an entire set of binary part diagrams is incorporated. sensible elements resembling fabrics dealing with, safeguard, impurity and disorder relief also are mentioned in depth.Fundamentals within the components of silicon precursor compounds, polysilicon, silicon crystal development, wafer fabrication, epitaxial and CVD deposition are addressed through specialists in those fields. fabrics houses coated comprise electric, optical and mechanical houses, deep point impurities and provider lifetime, and thermochemistry, in addition to particular sections on oxygen, carbon, and nitrogen impurities. The publication includes an in depth set of references, tables of fabrics constants, and silicon homes, and a presentation at the state-of-the-art of fabrics production.
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Extra resources for Handbook of Semiconductor Silicon Technology
Example text
3 The JANAF value for SiHC13(g) appears to be a reasonable one based upon the other values and their associated errors. Therefore, it is recommended that the updated JANAF Tables (33) be used for all of the thermodynamic data for the chlorosilanes, with the exception of AHf"298 for SiC13. The reason for not using the JANAF value for Sic13 is explained in an earlier paper (34) and is still believed to be valid. Standard enthalpy and standard entropy data for compounds at equilibrium in the Si-CI-H system are summarized in Table 6.
2 Polysilicon Reactors Polysilicon reactors are the point of elemental silicon formation. The gaseous feedstock enters the reactors to remain for a sufficient time (5-20 seconds) to allow the TCS to dissociate into elemental silicon and gaseous by-products. 42 Handbook of Semiconductor Silicon Technology The dissociation process occurs directly on resistance-heated filaments inside the reactor chamber. TCS dissociation occurs above 575°C (typically 1100°C is used). Between 10 and 200 polysilicon reactors may be located at one plant site.
These revisions appear in the updated JANAF Tables (33). Walsh (35) reviewed Hf"298 for the chlorosilanes and agreed that the JANAF data were reasonable except that for SiHC13. Three experimental values exist for SiHC13 in addition to the value reported by Hunt and Sirtl (34). Silicon Precursors: Their Manufacture and Properties 15 These are listed in Table 5 . 7 kJ/mol for SiClq(g). Table 5 Standard Enthalpy of Formation Values for SiHC13(g) Based on AHf ~~ ig8 = - 6 6 2 . 3 The JANAF value for SiHC13(g) appears to be a reasonable one based upon the other values and their associated errors.