By Ruud E.I. Schropp, Miro Zeman
Amorphous silicon sunlight mobilephone expertise has developed significantly because the first amorphous silicon sun cells have been made at RCA Laboratories in 1974. Scien tists operating in a few laboratories all over the world have built superior alloys in accordance with hydrogenated amorphous silicon and microcrystalline silicon. different scientists have built new equipment for starting to be those skinny movies whereas but others have constructed new photovoltaic (PV) machine buildings with im proved conversion efficiencies. within the final years, numerous businesses have built multi-megawatt production crops which could produce large-area, multijunction amorphous silicon PV modules. an increasing number of humans be lieve that thin-film photovoltaics can be built-in into constructions on a wide scale within the following couple of a long time and may be ready to make a massive contribution to the world's strength wishes. during this booklet, Ruud E. I. Schropp and Miro Zeman supply an authoritative review of the present prestige of skinny movie sun cells in response to amorphous and microcrystalline silicon. They evaluation the numerous advancements that experience happened through the evolution of the expertise and in addition speak about the main im portant contemporary techniques within the deposition of the fabrics, the certainty of the physics, and the fabrication and modeling of the devices.
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Extra resources for Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology
Example text
See Fig. 5), which triggered new interest in the deposition method which they renamed to Hot Wire CVD. The principle of the success of HWCVD in obtaining these exceptionally good films is that the feedstock gas, such as silane, is very effectively decomposed into atomic fragments at the surface of the filament if this is kept at a temperature significantly higher than 1500 °C, SiH4 ---+ Si + 4H. 1) In combination with a low pressure this enables a high deposition rate without gas-phase nucleation of particles.
Meot, P. Roubeau, and P. Parrens, New reactor design for low contamination amorphous silicon deposition, Proceedings of the 8th European Community PhotovoItaic Solar Energy Conference, Florence 1988, Editors: 1. Solomon, B. Equer, and P. Helm (Kluwer Academic Publishers, Dordrecht/Boston/London, The Netherlands, 1988) 964. , B. von Roedern, P. Klose, RE. Hollingsworth, J. Xi, J. del Cueto, H. K Bhat, Recent progress in multichamber deposition of high quality amorphous silicon solar cells on planar and compound curved substmtes at GSI, Solar Cells 27 (1989)59-68.
V. Shah, Influence of plasma excitation frequency on deposition rate and on film properties for hydrogenated amorphous silicon, in: Amorphous Silicon Semiconductors - Pure and Hydrogenated, edited by A. Madan, M. Thompson, D. Adler, and Y. Hamakawa, Materials Research Society Symp. Proc. 95 (1987b) 249-253. , RE.!. M. B. M. F. van der Weg, P. Rava, F. F. Pirri, and E. A. J. Thompson, A. G. LeComber, Materials Research Society Symp. Proc. 297 (1993) 61-66. X. Ping, S. Kaushal, M. Bhan, and M. Leonard, Growth of high-quality amorphous silicon films with significantly improved stability, Appl.