New Scientist is a weekly foreign technological know-how journal and web site masking fresh advancements in technological know-how and know-how for a basic English-speaking viewers. New Scientist has maintained an internet site considering 1996, publishing day-by-day information. in addition to masking present occasions and information from the medical neighborhood, the journal frequently positive aspects speculative articles, starting from the technical to the philosophical.
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583-585. [9] E. Prochnow and D. F. Edwards: Applied Optics, Vol. 25 (1986), pp. 2639-2640. Q. Wang: Lapping/Polishing Machine for Optical Parts and its Application in Lapping/ Polishing Sapphire Wafers, CN Patent 1,546,283, 2003. S. F. M. Grimes: Semiconductor International, Vol. 18 (1995), pp. 115 -118. [12] T. Fukami, H. Masumura, K. Suzuki and H. Kudo: Method of Manufacturing Semiconductor Mirror Wafers, European Patent Application EP0782179A2, 1997. J. R. Billingsley and S. Miura: International Journal of Machine Tools and Manufacture, Vol.
Laser Technologies. Laser technology in assisting grinding was first proposed by Westkamper [2] for dressing and truing of CBN grinding wheels. Laser dressing poses the risk of thermal damage, bond material resolidification (in case of metal bond), grit damage or graphitization of diamond grits and high initial setup cost, but Hosokawa [3] reported successful elimination of most of these problems with Nd:YAG laser. Laser assisted mechanical dressing uses laser irradiation to soften the bond material and the following cutter removes it with ease [4].
18 (1995), pp. 115 -118. [12] T. Fukami, H. Masumura, K. Suzuki and H. Kudo: Method of Manufacturing Semiconductor Mirror Wafers, European Patent Application EP0782179A2, 1997. J. R. Billingsley and S. Miura: International Journal of Machine Tools and Manufacture, Vol. 39 (1999), pp. 1103–1116. J. Pietsch and M. Kerstan: Simultaneous Double-disk Grinding Machining Process for Flat, Low-damage and Material-saving Silicon Wafer Substrate Manufacturing, Proceeding of the 2nd Euspen International Conference, Turin, Italy, (2001), pp.