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Extra resources for Introduction to Microlithography: Theory, Materials, and Processing (Acs Symposium Series)
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42) PMMA 2. THOMPSON AND BOWDEN Lithographic 49 Process on the size and shape of relief structures which can be achieved i n the resist, particularly for complex patterns with high packing densities and dimensions < 1 μ π ι . A l t h o u g h it is possible to fabricate structures with dimensions approaching tens of nanometers, a thorough understanding of the factors that affect the shape and size of the developed relief structure after exposure is important to the practical application of electron beam lithography.
A s the elec trons travel through the resist, they scatter laterally, and the region of expo sure by the forward scattered electron is increased at the resist-substrate interface compared with near the top of the film. The region over which the backscattered electrons expose the resist is defined by the electron range i n the resist and the substrate. W h i l e the m a x i m u m energy dissipated per unit volume by the backscattered electrons is much less than that by the forward scattered electrons, the volume integrated contributions are comparable.
Figure 10 illustrates a perfectly coherent source radiating a series of spherical wave fronts. 00 "2"00 300 400 WAVELENGTH Figure 9. Typical 600 500 IN NM. high pressure Mercury-arc spectrum. B y definition, a wavefront is the locus of points, all of which are in the same phase. Thus when an observer at point Ρ "looks" at any two photons along the paths P and P at points 1 and 2 on a single wave front, those two pho tons w i l l have the same phase. A laser is spatially coherent as is a conventional source that is infinitely small.