By Rahul Sahay
Study ASP.NET MVC net programming with distinct hands-on tasks
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002 with 1 MW/cm2 pump intensity. 85-87]. 1 for other material parameters), and the exciton resonances are usually not resolved. This, however, does not imply that these materials exhibit a free-carrier nonlinearity. 3 for InSb, the absorption spectrum does not exhibit aVE-type behavior, but rather shows a steep increase around the band edge. This steep increase is due to the exciton that is not spectrally resolved and the electron-hole Coulomb enhancement effects discussed above. In other words, these narrowgap materials behave quite similarly to the semiconductors with a wider gap, the major difference being the small exciton binding energy inhibiting the spectral resolution of the exciton.
State filling and Coulomb interaction between injected electron-hole pairs are the responsible mechanisms for the bleaching. Generation of one electronhole pair causes saturation of the one-pair transition and changes the excitation spectrum for the second pair. In particular, the Coulomb interaction between the pairs is responsible for the significantly different two electron-hole pair spectrum compared with the one electron-hole pair spectrum. As shown in Fig. 20, there is an induced absorption feature on the high energy side of the B transition (the negative part of the signal).
3 for InSb, the absorption spectrum does not exhibit aVE-type behavior, but rather shows a steep increase around the band edge. This steep increase is due to the exciton that is not spectrally resolved and the electron-hole Coulomb enhancement effects discussed above. In other words, these narrowgap materials behave quite similarly to the semiconductors with a wider gap, the major difference being the small exciton binding energy inhibiting the spectral resolution of the exciton. 6 Thermal NonIinearities in GaAs, CdS, ZnSe, and ZnS The index of refraction of a material can be changed by varying the temperature.